General-purpose NPN silicon bipolar (BJT) transistor for low-power switching and signal amplification. Widely used in audio preamplifiers, drivers and general-purpose circuits.
| Parameter | Value |
|---|---|
| Type | NPN bipolar (BJT) |
| VCBO (collector–base) | 60 V |
| VCEO (collector–emitter) | 40 V |
| VEBO (emitter–base) | 6 V |
| IC (collector current, max) | 200 mA |
| Ptot (TO-92, 25 °C) | 625 mW |
| hFE (DC current gain) | 100–300 (IC = 10 mA) |
| fT (transition frequency) | 300 MHz |
| Cobo (output capacitance) | 4 pF |
| TJ (max junction temp.) | 150 °C |
| Package | TO-92 |
Applications: Low-power switching, audio preamplifiers, signal amplification, general-purpose circuits.
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