7.14 € incl. PVN
P-channel power MOSFET, −100 V / −23 A, RDS(on) 0.117 Ω, TO-247 (HEXFET).
Availability: 10 in stock
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Ask about this productP-channel HEXFET power MOSFET in TO-247 for high-side and complementary power switching.
| Parameter | Value |
|---|---|
| Type | P-channel enhancement MOSFET (HEXFET) |
| VDSS | −100 V |
| ID | −23 A |
| RDS(on) | 0.117 Ω |
| Package | TO-247 |
Applications: High-side switching, complementary (push-pull) power stages, audio.
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